BTlabs is dedicated to the development and promotion of RF MEMS technology in Russia.
We provide a full production cycle of RF MEMS devices:
Design and development of the device
Mechanical, thermal and electromagnetic modelling and simulation
Prototyping and low volume production
Reliability test and measurement
RF MEMS devices
RF MEMS technology
The principle of work of RF micro-electro-mechanical systems (MEMS) is based on mechanical deformation of a movable structural element (membrane) under electrostatic forces caused by the application of DC voltage to the control electrode.
Mechanical deformation causes a change in spacing between electrodes which allows to implement multistep devices with tunable capacitance, multichannel switches, inductors and capacitors of variable value, reconfigurable resonators and filters.
RF MEMS vs. semiconductors
At the modern level of RF technology development, RF MEMS is the most promising substitution of semiconductor elements.
RF MEMS devices show superior signal performance as compared to semiconductor devices in terms of
low insertion loss
low power consumption
potentially low cost
With these advantages, RF MEMS are a perfect choice for reconfigurable RF and microwave systems, and find applications in reconfigurable telecommunication networks, antenna tuning/matching networks, high-performance remote sensing/radar safety/security systems, but also in many other applications.
In mobile communications, use of reconfigurable RF MEMS filters provides device miniaturization and longer battery life.
In satellite and space applications, RF MEMS offer an additional advantage of radiation resistance.
In radar systems, RF MEMS-based devices will increase the operating range of the antenna system.
The developed RF MEMS varactors outperform traditional semiconductor varactors in terms of
The advantages of MEMS varactors allow to develop microwave devices with superior RF characteristics, in some cases up to 40 GHz.
The varactors structure allows to fabricate them in a single process with the devices they are to be a part of, which excludes additional loss due to assembly.
RF MEMS varactor datasheet
The developed RF MEMS switches are based on the principle of band-reject filter. It allows to develop switches for any frequency from the 0.1–40 GHz range without changing their design which helps avoid deterioration of electrical and mechanical characteristics of the switch at higher operating frequencies.
Because of small size of RF MEMS elements, the switches have a high level of integration with other functional blocks in an RF device thus providing additional opportunities for its miniaturization.
RF MEMS switches are able to completely replace pin-diode analogues at frequencies up to 10 GHz and can successfully compete with transistor and coaxial switches in the frequency range of up to 40 GHz.
RF MEMS switch datasheet
The developed X-band 6-bit RF MEMS phase shifters are cascade-connected tracts of transmission lines loaded on capacitances.
Independent control provides any value of phase shift in the range from 5.6° to 180° with 5.6° step. A special configuration of the tracts gives direct loss better than 2 dB for the worst mode 180°.
With their miniature size RF MEMS phase shifters can be integrated with ICs.
RF MEMS phase shifter datasheet
RF MEMS-based filters are electronically-reconfigurable devices with such advantages as high tuning speed, easy implementation and capability to operate in autonomous blocks.
MEMS varactor is used as a control element in the filter. Compared to semiconductor varicaps, it is free from their main disadvantage — low Q-factor — and do not affect the form of attenuation-frequency characteristic.
The filers are developed in such a way that RF MEMS varactor is an integral part of the structure and does not require further assembly. It helps avoid additional negative effect of assembly elements on the RF parameters of the filter. It also allows to implement very compact small filters with no compromise in performance.