Bazovye Tekhnologii
Research & Development
in Electronics and Radio Engineering
Mechanical analysis
Thermal analysis
Electromagnetic tasks


Bazovye Tekhnologii (Basic Technologies in Russian) is an innovative R&D company based in Moscow, Russia. We focus on research and development in semiconductor electronics and radio engineering.

Among our main activities are:

  • development of radio frequency microelectromechanical (RF MEMS) switches, varactors, tunable capacitors
  • design of RF MEMS based microwave devices: tunable filters, phase shifters, etc.

We design microwave devices using comprehensive numerical modeling and simulations based on solving complex interdisciplinary tasks such as mechanical, thermal and electromagnetic analysis. All simulations are performed in advanced Finite Element and Monte Carlo program packages.

We are open to complex and challenging projects and ready for co-operation with international partners. To consult with us about your project call +7 (499) 557-09-07 or send us an e-mail to

Mechanical analysis

Structural calculations are of extreme importance in mechanical engineering. They involve 2D and 3D modelling of structures and subsequent calculation of internal stresses and external loads and deformations, as well as analysis of natural oscillation frequencies and forms.

Such analysis is performed in ANSYS Mechanical software package that allows calculating the system’s deflected mode statically and dynamically.

We can

  • Calculate deflected mode of structures
  • Carry out modal and harmonic analysis

  • Analyze structure’s resistance to vibratory loads

  • Carry out buckling analysis (linear and non-linear cases)

Examples of completed projects

Thermal analysis

Heat exchange problem solving is indispensable during the design phase of any device. We use special modules of ANSYS software package, which allow calculating temperature and heat-fluxes distribution statically and dynamically.

Thermal analysis is commonly used as a part of complex multidisciplinary tasks. For example, in electric circuit problems, calculation of electric field distribution is followed by the temperature test. The obtained temperature distribution can in turn be used as initial data for structural analysis – calculation of thermal load-induced deformations.

We can

  • Calculate temperature distribution depending on external conditions
  • Take into account convection and radiation

  • Assess structure’s thermal deformations

  • Simulate heating in electric circuits

Examples of completed projects

Electromagnetic tasks

Various electromagnetic problems need to be solved during the development of any electronic device. These can be an integrated chip or a whole antenna array. Such problems are not easily solved and require an experience in electronic engineering.

We can

  • Solve electromagnetic compatibility problems
  • Calculate electromagnetic fields, currents and charge distribution

  • Obtain and analyze S-parameters

  • Perform harmonic analysis

Examples of completed projects

BTlabs is dedicated to the development and promotion of RF MEMS technology in Russia.

We provide a full production cycle of RF MEMS devices:

  • Technology development

  • Design and development of the device

  • Mechanical, thermal and electromagnetic modelling and simulation

  • Prototyping and low volume production

  • Reliability test and measurement

RF MEMS devices

RF MEMS technology

The principle of work of RF micro-electro-mechanical systems (MEMS) is based on mechanical deformation of a movable structural element (membrane) under electrostatic forces caused by the application of DC voltage to the control electrode.

Mechanical deformation causes a change in spacing between electrodes which allows to implement multistep devices with tunable capacitance, multichannel switches, inductors and capacitors of variable value, reconfigurable resonators and filters.

RF MEMS vs. semiconductors

At the modern level of RF technology development, RF MEMS is the most promising substitution of semiconductor elements.

RF MEMS devices show superior signal performance as compared to semiconductor devices in terms of

  • low insertion loss

  • high isolation

  • high linearity

  • high Q-factors

  • low power consumption

  • large bandwidth

  • potentially low cost


With these advantages, RF MEMS are a perfect choice for reconfigurable RF and microwave systems, and find applications in reconfigurable telecommunication networks, antenna tuning/matching networks, high-performance remote sensing/radar safety/security systems, but also in many other applications.

In mobile communications, use of reconfigurable RF MEMS filters provides device miniaturization and longer battery life.

In satellite and space applications, RF MEMS offer an additional advantage of radiation resistance.

In radar systems, RF MEMS-based devices will increase the operating range of the antenna system.


The developed RF MEMS varactors outperform traditional semiconductor varactors in terms of

  • high Q-factor

  • small size

The advantages of MEMS varactors allow to develop microwave devices with superior RF characteristics, in some cases up to 40 GHz.

The varactors structure allows to fabricate them in a single process with the devices they are to be a part of, which excludes additional loss due to assembly.

RF MEMS varactor datasheet


The developed RF MEMS switches are based on the principle of band-reject filter. It allows to develop switches for any frequency from the 0.1–40 GHz range without changing their design which helps avoid deterioration of electrical and mechanical characteristics of the switch at higher operating frequencies.

Because of small size of RF MEMS elements, the switches have a high level of integration with other functional blocks in an RF device thus providing additional opportunities for its miniaturization.

RF MEMS switches are able to completely replace pin-diode analogues at frequencies up to 10 GHz and can successfully compete with transistor and coaxial switches in the frequency range of up to 40 GHz.

RF MEMS switch datasheet

Phase shifters

The developed X-band 6-bit RF MEMS phase shifters are cascade-connected tracts of transmission lines loaded on capacitances.

Independent control provides any value of phase shift in the range from 5.6° to 180° with 5.6° step. A special configuration of the tracts gives direct loss better than 2 dB for the worst mode 180°.

With their miniature size RF MEMS phase shifters can be integrated with ICs.

RF MEMS phase shifter datasheet


RF MEMS-based filters are electronically-reconfigurable devices with such advantages as high tuning speed, easy implementation and capability to operate in autonomous blocks.

MEMS varactor is used as a control element in the filter. Compared to semiconductor varicaps, it is free from their main disadvantage — low Q-factor — and do not affect the form of attenuation-frequency characteristic.

The filers are developed in such a way that RF MEMS varactor is an integral part of the structure and does not require further assembly. It helps avoid additional negative effect of assembly elements on the RF parameters of the filter. It also allows to implement very compact small filters with no compromise in performance.